For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-567 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6492, 1N6492U4, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as specified in

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
.
MIL-PRF-19500/567E
Rin = 5.0 Ω, 1 W
VG = 10 Volts
RG = 50 Ω
RS = 0-1 Ω, 1 W
PW = 30 µs
L = 260 µH
Duty cycle ≤ 1 percent
T = IRF130/2N6756 or equivalent
Procedure:
1. With S open, adjust pulse width to test current of 2 A across RS.
2. Close S. Verify test current with current sense.
3. Read peak output voltage (see 4.5.4).
FIGURE 4. Peak reverse energy test circuit.
13



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.