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MIL-PRF-19500-567 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6492, 1N6492U4, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/567E
U4
1
2, 3
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
BL
0.215
0.225
5.46
5.72
BW
0.145
0.155
3.68
3.94
CH
0.049
0.075
1.24
1.91
LH
-
0.020
-
0.508
LL1
0.085
0.125
2.16
3.17
LL2
0.045
0.075
1.14
1.90
LS1
0.070
0.095
1.78
2.41
LS2
0.035
0.048
0.889
1.21
LW1
0.135
0.145
3.43
3.68
LW2
0.047
0.057
1.19
1.45
Q1
0.030
0.070
0.762
1.78
Q2
0.020
0.035
0.508
0.88
TERM 1
Cathode
TERM 2
Anode 1
TERM 3
Anode 2
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 2. Physical dimensions and configuration (U4).
4



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