MIL-PRF-19500-589 Semiconductor Device, Transistor, Insulated Gate, Bipolar N-Channel, Silicon Types 2N7367 And 2N7368, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/589A

TABLE II. Group E inspections (all quality levels) for qualification only.

Inspections

MIL-STD-750

Quality conformance

inspection sample size

Method

Conditions

45 devices, c = 1

Subgroup 1

Thermal shock

1051

-55 C to +150 C

(temperature shock)

500 cycles

1071

Hermetic seal

Fine leak

Gross leak

Electrical measurements

See table V, steps 1, 2, 3, 4, 5, 6, and

Subgroup 2 2/

45 devices, c = 1

Steady-state reverse bias

1042

Condition A, 1,000 hours

TJ = 150 C +0 C, -15 C

Electrical measurements

See table V, steps 1, 2, 3, 4, 5, 6, and

Steady-state gate bias

1042

Condition B, 1,000 hours

TA = +150 C

Electrical measurements

See table V, steps 1, 2, 3, 4, 5, 6, and

Subgroup 3

DPA

2102

5 devices, c = 0

Subgroup 4

Thermal resistance

3103

See 4.5.2

3101

5 devices, c = 0

Subgroup 5

Barometer pressure test

1001

Condition C,

VCE = 600 V maximum,

I(ISO) = 0.25 mA

1/ In initial design verification only (1 time testing).

2/ A separate sample shall be pulled for each test.