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MIL-PRF-19500-589 Semiconductor Device, Transistor, Insulated Gate, Bipolar N-Channel, Silicon Types 2N7367 And 2N7368, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/589A
4.5.2 Thermal resistance.
4.5.2.1 Thermal resistance for IGBT. Thermal resistance measurements shall be performed in accordance with method 3103 of MIL-
STD-750. The maximum limit of R JC(max) shall be 0.64 C /W. The following parameter measurements shall apply:
Measuring current (IM) ............................................. 10 mA.
a.
Collector heating current (IH).................................... 4 A minimum.
b.
Heating time (tH)....................................................... Steady-state (see MIL-STD-750, method 3103, for definition).
c.
Collector-emitter heating voltage (VH) ...................... 25 V minimum.
d.
Measurement time delay (tMD) ................................. 30 to 60 s.
e.
Sample window time (tSW) ....................................... 10 s maximum.
f.
4.5.2.2 Thermal resistance for diode. Thermal resistance measurements shall be performed in accordance with method 3101 of MIL-
STD-750. The maximum limit of R JC(max) shall be 1.2 C/W. The following parameter measurements shall apply:
Measuring current (IM) ............................................. 10 mA.
a.
Collector heating current (IH).................................... 15 A minimum.
b.
Heating time (tH)....................................................... Steady-state (see MIL-STD-750, method 3103, for definition).
c.
Measurement time delay (tMD) ................................. 30 to 60 s.
d.
Sample window time (tSW) ....................................... 10 s maximum.
e.
4.5.3 Gate stress test.
VGE = 30 V minimum.
t = 250 s minimum.
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