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MIL-PRF-19500-589 Semiconductor Device, Transistor, Insulated Gate, Bipolar N-Channel, Silicon Types 2N7367 And 2N7368, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL-PRF-19500/589A
Dimension
Symbol
Inches
Millimeters
Min
Max
Min
Max
BL
.530
.550
13.46
13.97
BW
.685
.695
17.40
17.65
CH
.240
.270
6.10
6.86
LD
.055
.065
1.40
1.65
LL
.500
.750
12.70
19.05
LO
.140 BSC
3.56 BSC
LS
.200 BSC
5.08 BSC
MHD
.120
.130
3.05
3.30
TL
1.030
1.300
26.16
33.02
.245
.255
6.22
6.48
TL1
.125 BSC
3.18 BSC
TL2
TT
.035
.045
0.89
1.14
NOTES:
1.  Refer to applicable symbol list.
TW
1.185
1.195
30.10
30.35
2.  Dimensions and tolerance in accordance with ANSI
Y14.5M - 1982.
3.  All dimension in inches.
.940 BSC
23.88 BSC
TW1
4.  Term 1 = Collector, Term 2 = Emitter, Term 3 = Gate.
q
.285 BSC
7.24 BSC
FIGURE 2. Physical dimensions of TO-259.
4



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