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MIL-PRF-19500-609 Semiconductor Device, Diode, Silicon, Switching, Types 1N6639, 1N6640, 1N6641, 1N6639Us, 1N6640Us, And 1N6641Us Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for controlled forward voltage switching diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/609K
* TABLE I. Group A inspection.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
Forward voltage
4011
IF = 1 mA dc pulsed (see 4.5.4)
VF1
1N6640, 1N6640US
0.540
0.620
V dc
Forward voltage
4011
IF = 50 mA dc pulsed (see 4.5.4)
VF2
1N6640, 1N6640US
0.760
0.860
V dc
Forward voltage
4011
IF = 100 mA dc pulsed (see 4.5.4)
VF3
1N6640, 1N6640US
0.820
0.920
V dc
Forward voltage
4011
IF = 200 mA dc pulsed (see 4.5.4)
VF4
1N6640, 1N6640US
0.870
1.00
V dc
1N6641, 1N6641US
0.870
1.10
V dc
Forward voltage
4011
IF = 500 mA dc pulsed (see 4.5.4)
VF5
1N6639, 1N6639US
1.20
V dc
I(BR) = 10 µA dc
Breakdown voltage
4021
VBR
1N6639, 1N6639US
100
V dc
1N6640, 1N6640US
75
V dc
1N6641, 1N6641US
75
V dc
Reverse current
4016
DC method;
IR1
1N6639, 1N6639US
VR = 75 V dc
100
nA dc
1N6640, 1N6640US
VR = 50 V dc
100
nA dc
1N6641, 1N6641US
VR = 50 V dc
100
nA dc
Subgroup 3
TA = +150°C
High temperature
operation:
Reverse current
4016
DC method
IR2
µA dc
1N6639, 1N6639US
VR = 75 V dc
90
µA dc
1N6640, 1N6640US
VR = 50 V dc
90
µA dc
1N6641, 1N6641US
VR = 50 V dc
90
See footnotes at end of table.
12



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