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MIL-PRF-19500-609 Semiconductor Device, Diode, Silicon, Switching, Types 1N6639, 1N6640, 1N6641, 1N6639Us, 1N6640Us, And 1N6641Us Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for controlled forward voltage switching diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/609K
* TABLE I. Group A inspection Continued.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 3 continued
TA = -55�C
Low-temperature
operation:
Forward voltage
4011
Pulsed
VF6
1N6639, 1N6639US
IF = 500 mA pulsed (see 4.5.4)
1.3
V dc
1N6640, 1N6640US
IF = 200 mA pulsed (see 4.5.4)
1.1
V dc
1N6641, 1N6641US
IF = 200 mA pulsed (see 4.5.4)
1.2
V dc
Subgroup 4
Capacitance
4001
VR = 0 V dc; Vsig = 50 mV(p-p),
CT1
f = 1 MHz
1N6639, 1N6639US
2.5
pF
1N6640, 1N6640US
2.5
pF
1N6641, 1N6641US
3.0
pF
Reverse recovery time
4031
Condition A, IF = IRM = 10 mA dc
trr
1N6639, 1N6639US
4.0
ns
1N6640, 1N6640US
4.0
ns
1N6641, 1N6641US
5.0
ns
Scope display
4023
See method 4023 of MIL-STD-750,
Figure 4023-3, -7, -9, -10 only
Subgroup 5
Not applicable
Subgroup 6
Surge current
4066
Test condition A, IFSM = 2.5 A(pk)
*
ten surges at 1 per minute (max),
surge duration of 1/120 seconds
Electrical measurements
See table I, subgroup 2 herein
Subgroup 7
Forward recovery voltage
4026
IF = 200 mA dc (see 4.5.2)
Vfr
5.0
V(pk)
and time
tfr
10.0
ns
1/
For sampling plan, see MIL-PRF-19500.
13



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