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MIL-PRF-19500-617 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6672 Through 1N6674 And 1N6672R Through 1N6674R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL PRF-19500.

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MIL-PRF-19500/617D
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.535
.545
13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.530
.550
13.46
13.97
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
TT
.040
.050
1.02
1.27
TW
.535
.545
13.59
13.84
SCHEMATIC
1N6672, 1N6673, 1N6674
|───O2
TERM 1 = ANODE 1
TERM 2 = CATHODE
|
3 O ──┼─┘
TERM 3 = ANODE 2
1N6672R, 1N6673R, 1N6674R
TERM 1 = CATHODE 1
TERM 2 = ANODE
TERM 3 = CATHODE 2
NOTES:
1. Dimensions are in inches.
2. Millimeters given for general information only.
3. All terminals are isolated from case.
4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
FIGURE 1. Dimensions and configuration (TO-254AA).
2



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