MIL-PRF-19500-617 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6672 Through 1N6674 And 1N6672R Through 1N6674R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL PRF-19500.

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MIL-PRF-19500/617D

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

22 devices

Subgroup 1

c=0

500 cycles, -65C to +175C.

Temperature cycling

1051

Hermetic seal

1071

Electrical measurements

See table I, subgroup 2 and table III, steps 1 and 2. For

irradiated devices, include trr as an end-point

measurement.

Subgroup 2

22 devices

c=0

Steady-state dc blocking

1048

t = 1,000 hours VR = 80 percent Vrated

life

Electrical measurements

See table I, subgroup 2 and table III, steps 1 and 2. For

irradiated devices, include trr as an end-point

measurement.

Subgroup 4

Sample size

N/A

See MIL-PRF-19500.

Thermal impedance

curves

Subgroup 5

22 devices

c=0

VR = rated VR (see 1.3); pressure = 33 mm Hg; t = 1 minute

Barometric pressure,

1001

(minimum), RISO = 2.0 x 106 ohm max. IR = IR1

reduced (altitude

operation).

Subgroup 6

Not applicable

Subgroup 8

22 devices

Forward surge

4066

c=0

Electrical measurements

See table I, subgroup 2 herein.