MIL-PRF-19500-617 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6672 Through 1N6674 And 1N6672R Through 1N6674R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL PRF-19500.

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MIL-PRF-19500/617D

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with appendix E, table

E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table

I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

appendix E,

Measurement

table E-IV of

MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

Surge (see 4.3.1)

(1) 3c

Thermal impedance (see 4.3.2)

Not applicable

VF1 and IR1

Method 1038 of MIL-STD-750, test

Not applicable

condition A; t = 48 hrs: VR = 80 percent of

rated VR.

VF1 and IR1; VF1 =  0.1 V (pk);

VF1 and IR1

IR1 = 10 A dc or 100 percent from the

initial value, whichever is greater.

Method 1038 of MIL-STD-750, test condition A;

Method 1038 of MIL-STD-750, test

t = 48 hours, VR = 80 percent of rated VR

condition B; t = 240 hours (see 4.3.3)

Subgroup 2 of table I herein;

VF1 and IR1; VF1 = 0.1 V (pk);

IR1 = 10 A dc or 100 percent from the

IR1 = 10 A dc or 100 percent from the initial

initial value, whichever is greater.

value, whichever is greater.

(1)

Shall be performed anytime after temperature cycling, screen 3a; and does not need to be

repeated in screening requirements.

4.3.1 Surge current. Surge current, method 4066 of MIL-STD-750. IO = 0; VRM(w) = 0; IFSM = see 1.3; six surges;

TA = 25C, tp = 8.3 ms, one minute minimum time between surges.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 or 4081, as applicable, of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC

and VH where appropriate). See table II, group E, subgroup 4 herein.

4.3.3 Burn-in conditions. Burn-in conditions are as follows: TA = room ambient as defined in the general

requirements of MIL-STD-750 (see 4.5). VR = rated. Adjust IO or IF to achieve TJ = 150C minimum.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.