For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-617 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6672 Through 1N6674 And 1N6672R Through 1N6674R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
MIL-PRF-19500/617D
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
C/W
Thermal impedance
3101
See 4.3.2
ZJX
IR = 500 A dc pulsed (see 4.5.1)
VBR
Breakdown voltage
4022
V dc
300
1N6672, 1N6672R
V dc
400
1N6673, 1N6673R
V dc
500
1N6674, 1N6674R
Forward voltage
4011
IF = 10 A (pk); pulsed (see 4.5.1)
VF1
1.35
V dc
IF = 20 A (pk); pulsed (see 4.5.1)
VF2
1.55
V dc
A dc
Reverse current
4016
DC method; VR = 80 percent rated
IR1
50
leakage
VR (see 1.3); pulsed (see 4.5.1)
Subgroup 3
TC = +100C
High temperature
operation:
Reverse current
4016
DC method VR = 80 percent rated
IR2
5
mA
leakage
VR (see 1.3); pulsed (see 4.5.1)
dc
TA = -65C
Low temperature
operation:
Forward voltage
4011
IF = 10 A (pk);
VF3
1.45
V dc
pulsed (see 4.5.1)
Subgroup 4
Scope display
evaluation 2/
trr
35
ns
Reverse recovery time
4031
Condition B; IF = .5A, IR = 1A,
IRR = .25A
Junction capacitance
4001
VR = 10 V dc, f = 1 MHz,
CJ
150
pF
VSIG = 50 mV (p-p) (max)
See footnotes at end of table.
7



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.