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MIL-PRF-19500-625 Semiconductor, Device, Diode, Silicon, Switching Types 1N6683, 1N6684, 1N6685, In6683Us, 1N6684Us, And 1N6685Us Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for switching diodes, suitable for high stress environments where silver button construction may be inadequate \(see 6.3\).

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MIL-PRF-19500/625A
TABLE I. Group A inspection.
MIL-STD-750
Limits
Unit
Inspection 1/
Method
Conditions
Symbol
Min
Max
Subgroup 1
2071
Visual and mechanical
inspection
Subgroup 2
°C/W
See 4.5.5
3101
25
Thermal impedance
ZθJX
tp = 300 µs
V dc
4011
1.00
Forward voltage
VF1
(1N6683 only)
IF = 200 mA
V dc
4011
1.00
Forward voltage
tp = 300 µs
VF2
(1N6684 only)
IF = 300 mA dc pulsed
V dc
4011
1.00
Forward voltage
tp = 300 µs
VF3
(1N6685 only)
IF = 300 mA dc pulsed
V dc
4021
Breakdown voltage
VBR
IR = 100 µA dc
200
1N6683, 1N6683US
250
1N6684US, 1N6640, 1N6640US
350
1N6685, 1N6685US
nA dc
4016
Reverse current
IR1
DC method
100
100
1N6683, 1N6683US
VR = 175 V dc
200
1N6684, 1N6684US
VR = 200 V dc
1N6640, 1N6640US
VR = 275 V dc
Subgroup 3
µA dc
High temperature operation:
IR2
TA = +150°C,
4016
Reverse current
100
DC method
100
1N6683, 1N6683US
200
1N6640, 1N6640US
VR = 175 V dc
1N6685, 1N6685US
VR = 200 V dc
VR = 275 V dc
See footnotes at end of table.
10



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