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MIL-PRF-19500-158 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N3154-1, Through 1N3157-1, And 1N3154Ur-1 Through 1N3157Ur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 8.4 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/158T
TABLE II. Group D inspection.
VZ1
Pre-irradiation
Post-irradiation
Unit
Symbol
Inspection
MIL-STD-750
limits
limits
pre-post
M, D, R, L, F,
M, D, R, L, F,
irradiation
1/ 2/
Method
Conditions
G and H
G and H
change
Min
Max
Min
Max
Min
Max
Subgroup 1
Not applicable
TC = +25C
Subgroup 2
1019
Steady-state
IZ = 10.0
total dose
0.01 mA dc,
irradiation
condition A
Reference voltage
4022
IZ = 10.0
VZ
7.98
8.82
7.98
8.82
V dc
0.01 mA dc
(see 4.5.3)
4051
IZ = 10.0
ZZ
15
15
ohms
Small-signal
0.01 mA dc
breakdown
impedance
Isig = 1.0 ac
A
4016
DC method;
IR
10
10
Revere current
VR = 5.5 V dc
leakage
VZ
4022
IZ = 10.0
Voltage stability
0.01 mA dc
TA = +25C 2C
(see 4.5.1)
4.0
1N3154-1,
mV
1N3154UR-1
3.5
1N3155-1,
mV
1N3155UR-1
3.0
mV
1N3156-1,
1N3156UR-1
2.5
mV
1N3157-1,
1N3157UR-1
1/ For sampling plan, see MIL-PRF-19500.
2/ Group D qualification may be performed any time prior to lot formation.
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