For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-158 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N3154-1, Through 1N3157-1, And 1N3154Ur-1 Through 1N3157Ur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 8.4 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16


img
MIL-PRF-19500/158T
TABLE I. Group A inspection.
Inspection 1/
Symbol
Unit
MIL-STD-750
Limits
Min
Max
Method
Conditions
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
IZ = 10.0 0.01 mA dc
Reference voltage
VZ
7.98
4022
8.82
V dc
(see 4.5.3).
Small signal breakdown
4051
IZ =10.0 +0.1 mA dc,
15.0
ohms
ZZ
impedance
Isig = 1.0 mA ac.
Subgroup 3
VZ
IZ = 10.0 0.01 mA dc,
Voltage-temperature stability
TA = -55C, 0C. +25C, +75C,
+100C 2C.
(see 4.5.1 and 4.5.3)
1N3154-1, 1N3154UR-1
130.0
mV dc
1N3155-1, 1N3155UR-1
65.0
mV dc
26.0
mV dc
1N3156-1, 1N3156UR-1
13.0
mV dc
1N3157-1, 1N3157UR-1
Subgroups 4, 5, and 6
Not applicable
Subgroup 7
A
Reverse current leakage
4016
DC method; VR = 5.5 V dc.
IR
10.0
1/ For sampling plan, see MIL-PRF-19500.
9



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.