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MIL-PRF-19500-158 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N3154-1, Through 1N3157-1, And 1N3154Ur-1 Through 1N3157Ur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 8.4 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/158T
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. Specified electrical measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
(see table E-IV of
JANS level
JANTXV and JANTX level
MIL-PRF-19500)
1a
Required
Not required
1b
Required
Required (JANTXV only)
2
Not required
Not required
3a
Required
Required
3b
Not applicable
Not applicable
3c
Not applicable
Not applicable
4
Not applicable
Not applicable
5
Not applicable
Not applicable
6
Not applicable
Not applicable
7a
Not applicable
Not applicable
7b
Optional
Optional
8
Required
Not required
9
Required
Not applicable
10
Not applicable
Not applicable
11
Required VZ, ZZ
Required VZ, ZZ
12
Required see 4.3.1
Required see 4.3.1
Required
13
Required
Subgroups 2 of table I herein; ZZ ±15
Subgroups 2 and 3 of table I herein;
ZZ ±15 percent of initial reading.
percent of initial reading. TA = +25C ±2C,
TA = +25C ±2C, VZ ±0.004 V dc
VZ ±0.004 V dc from initial value for
from initial value for 1N3154-1,
1N3154-1, 1N3154UR-1, 1N3155-1,
1N3154UR-1, 1N3155-1, 1N3155UR-1.
1N3155UR-1.
VZ ±0.003 V dc from initial value for
VZ ±0.003 V dc from initial value for
1N3156-1, 1N3156UR-1, 1N3157-1,
1N3156-1, 1N3156UR-1, 1N3157-1,
1N3157UR-1.
1N3157UR-1.
14a
Not applicable
Not applicable
14b
Required (1) (2)
Required (1) (2)
(1) See MIL-PRF-19500.
(2) For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after temperature cycling.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: IZ = 10 mA dc min, 0.75 mA dc,
TA = +150C, +5C, -0C.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIa (JANS) and table E-VIb (JAN, JANTX, JANTXV) of MIL-PRF-19500. Electrical
measurements (end-points) shall be in accordance with the applicable steps of table I, subgroup 2 herein.
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