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MIL-PRF-19500-169 Semiconductor Device, Diode, Silicon, Switching, Types 1N3070, 1N3070-1, 1N3070Ur-1, 1N4938, 1N4938-1, 1N4938Ur-1, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for silicon, switching diodes. Three levels of product assurance are provided for each device type and two product assurance levels are provided for die, as specified in MIL-PRF-19500.

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MIL-PRF-19500/169N
Design Data
Metallization:
Dimension
Top:  Anode Al
Back: Cathode Au
Inches
Millimeters
Symbol
Min
Max
Min
Max
Al thickness: Top: 25,000Å minimum
A
.016
.018
0.41
0.46
Au thickness: Back: 4,000Å minimum
B
.016
.018
0.41
0.46
C
.007
.009
0.18
0.23
Chip thickness: 9 mils ±1 mil (0.23mm ±0.025mm)
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
* FIGURE 5. JANC (B-version) die dimensions for 1N4938.
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