MIL-PRF-19500/312E
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 2/
2071
n = 45 devices, c = 0
Visual and mechanical
examination 3/
2026
n = 15 leads, c = 0
Solderability 3/ 4/
Resistance to solvents 3/ 4/ 5/
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Electrical measurements 4/
Table I, subgroup 2
Hermetic seal 4/ 6/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual (design
2075
n = 4 devices, c = 0v
verification) 4/
Subgroup 2
°C/W
Thermal impedance
3131
See 4.3.3
ZθJX
40
V dc
Breakdown voltage
3001
Bias condition D;
V(BR)CBO
IC = 1.0 µA dc
collector to base
5.0
V dc
Breakdown to voltage
3026
Bias condition D;
V(BR)EBO
IE = 10 µA dc
emitter to base
15
V dc
Breakdown voltage,
3011
V(BR)CEO
Bias condition D; IC = 10 mA dc;
collector to emitter
pulsed (see 4.5.1)
20
V dc
Breakdown voltage,
3011
Bias condition B; IC = 10 mA dc;
V(BR)CER
collector to emitter
RBE ≤ 10 ohms; pulsed (see 4.5.1)
25
nA dc
3036
Bias condition D;
Collector to base cutoff current
ICBO1
VCB = 20 V dc
80
nA dc
Emitter to base cutoff current
3061
Bias condition D;
IEBO
VEB = 4 V dc
Forward-current
3076
15
VCE = 1 V dc;
hFE1
transfer ratio
IC = 0.5 mA dc
Forward-current
40
120
3076
hFE2
VCE = 1 V dc; IC = 10 mA dc;
transfer ratio
pulsed (see 4.5.1)
See footnotes at end of table.
9
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