MIL-PRF-19500/317R
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB, UBC, and UBCN suffix
package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the
manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and
JS respectively. The "2N" prefix and the "AUB" suffix may also be omitted. The radiation hardened designator M, D,
P, L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of
abbreviation required).
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I. II, III, and IV).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table IV tests, the tests specified in table IV herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-VI of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Thermal impedance (see 4.3.3)
Thermal impedance (see 4.3.3)
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ICES and hFE3
Not applicable
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ICES; hFE3;
ICES, hFE3
ĆICES = 100 percent of initial value or
25 nA dc, whichever is greater.
ĆhFE3 = ±15 percent of initial value.
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See 4.3.1
See 4.3.1
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Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆICES = 100 percent of initial value or
ĆICES = 100 percent of initial value or
25 nA dc, whichever is greater;
25 nA dc, whichever is greater;
ĆhFE3 = ±15 percent of initial value.
ĆhFE3 = ±15 percent of initial value.
(1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV do not need to be
repeated in screening requirements.
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