MIL-PRF-19500-317 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2369A, 2N3227, 2N4449, 2N2369Au, 2N3227U, 2N2369Aua, 2N3227Ua, 2N2369Aub, 2N2369Aubc, 2N2369Aubcn 2N3227Ub, 2N3227Ubc, 2N3227Ubcn, 2N4449U, 2N4449Ua, 2N4449Ub, 2N4449Ubc, And 2N4449Ubcn, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb, Jank...This specification covers the performance requirements for NPN, silicon, high speed switching transistors \(including dual devices\). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators ┬ôM┬ö, ┬ôD┬ö, ┬ôP┬ô, ┬ôL┬ö, ┬ôR┬ö, ┬ôF┬Æ, ┬ôG┬ö, and ┬ôH┬ö are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/317R

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV) Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double the sample size from either the failed

assembly lot or from another assembly lot from the same wafer lot. If the new assembly lot option is exercised, the

failed assembly lot shall be scrapped.

Step

Method

Condition

Steady-state life: 1,000 hours at VCB = 10 V dc; Maximum rated power (see 1.3) shall be

1026

applied to the device and ambient temperature shall be adjusted to achieve TJ ≥ +150�C.

n = 45, c = 0. The sample size may be increased and the test time decreased as long as the

devices are stressed for a total of 45,000 device hours minimum and the actual time of test is at

least 340 hours.

Blocking life: TA = +150�, VCB = 80 percent of rated voltage, 48 hours minimum.

1048

n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

1032

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See

MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance with table I,

subgroup 2. Delta requirements shall be in accordance with table III herein.

4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E; not applicable for U, UA, and UB devices.

1,000 hours at VCB = 5 - 15 V dc. Maximum rated power (see 1.3) shall be applied to the

1026

device and ambient temperature shall be adjusted to achieve TJ ≥ +150�C.

The sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours. n = 45, c = 0.