MIL-PRF-19500-343 Semiconductor Device, Transistor, Npn, Silicon, Low Power, Types 2N2857 And 2N2857Ub, Jan, Jantx, Jantxv, And Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Janhcf, Janhcg, Jansh, Janhc, And JankcThis specification covers the performance requirements for NPN, silicon, low power, ultra-high frequency transistors. Four levels of product assurance are provided for each device type. Two levels of product assurance are provided for unencapsulated devices as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R",

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MIL-PRF-19500/343K

TABLE II. Group D inspection - Continued.

Inspection 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 2 - Continued.

Collector-emitter saturation

3071

0.46

V dc

IC = 10 mA dc;

VCE(sat)

voltage

IB = 1 mA dc;

Base-emitter saturation voltage

3066

1.15

V dc

Test condition A; IC = 10 mA dc;

VBE(sat)

IB = 1 mA dc

Collector to emitter

3041

Bias condition C;

200

nA dc

ICES

cutoff current

VCE = 16 V dc

Tests to be performed on all devices receiving radiation exposure.

For sampling plan, see MIL-PRF-19500.

Electrical characteristics apply to the corresponding AL, UA, UB, and UBC suffix versions unless otherwise noted.

See 6.2.f herein.

See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and

post-radiation hFE. The [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value

can never exceed the pre-radiation minimum hFE that it is based upon.