MIL-PRF-19500-343 Semiconductor Device, Transistor, Npn, Silicon, Low Power, Types 2N2857 And 2N2857Ub, Jan, Jantx, Jantxv, And Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Janhcf, Janhcg, Jansh, Janhc, And JankcThis specification covers the performance requirements for NPN, silicon, low power, ultra-high frequency transistors. Four levels of product assurance are provided for each device type. Two levels of product assurance are provided for unencapsulated devices as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R",

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MIL-PRF-19500/343K

TABLE III. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/

MIL-STD-750

Step

Inspection

Limit

Symbol

Unit

Method

Conditions

Min

Max

100 percent of initial value

ĆICB01

Collector-base cutoff

3036

Bias condition D;

or 5 nA dc, whichever is

current

VCB = 15 V dc

greater.

ĆhFE1

�25 percent change from

Forward current

3076

VCE = 1.0 V dc;

transfer ratio

IC = 3 mA dc

initial value.

ĆVCE(sat)

�50 mV dc change from

Collector to emitter

3071

IC = 10 mA dc;

voltage (saturated)

IB = 1.0 mA dc

initial value.

1/ The delta measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table II herein, step 1.

b. Subgroups 4 and 5, see table II herein, step 3.

2/ The delta measurements for group B, 4.4.2.2 herein (JAN, JANTX, and JANTXV) are as follows:

Steps 1, 2, and 3 of 4.4.2.2, see table II herein, all steps.

3/ The delta measurements for table E-VII (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 2 and 3, see table II herein, step 1.

b. Subgroup 6, see table II herein, all steps.

4/ The delta measurements for table E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see table II herein, all steps.

5/ Devices which exceed the group A limits for this test shall not be acceptable.