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MIL-PRF-19500-354 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2604, 2N2604Ub, 2N2605, And 2N2605Ub, Jan, Jantx, Jantxv, And Jans, Janhc, JankcThis specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/354L

TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical

2071

n = 45 devices, c = 0

examination 3/

Solderability 3/ 4/

2026

n = 15 leads, c = 0

Resistance to solvents

1022

n = 15 devices, c = 0

3/ 4/ 5/

Temp cycling 3/ 4/

1051

Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic seal 4/ 6/

1071

n = 22 devices, c = 0

Fine leak

Gross leak

Electrical measurements 4/

Table I, subgroup 2

Bond strength 3/ 4/

2037

Precondition

TA = +250�C at t = 24 hours or

TA = +300�C at t = 2 hours,

n = 11 wires, c = 0

Decap internal visual (design

2075

n = 4 devices, c = 0

verification) 4/

Subgroup 2

ĆVBE

Thermal response

3131

See 4.3.3

Collector to base cutoff current

3036

Condition D.

ICBO1

�A dc

2N2604, UB

VCB = 80 V dc

�A dc

2N2605, UB

VCB = 70 V dc

Bias condition D; IC = 10 mA dc;

V dc

Collector - emitter

3011

V(BR)CEO

breakdown voltage

pulsed (see 4.5.1)

�A dc

Emitter - base

3061

Bias condition D;

IEBO1

cutoff current

VEB = 6 V dc

nA dc

Collector - base

3036

Bias condition D;

ICBO2

cutoff current

VCB = 50 V dc

nA dc

Emitter - base

3061

Bias condition D;

IEBO2

cutoff current

VEB = 5 V dc

nA dc

Collector - emitter

3041

Bias condition C;

ICES

cutoff current

VCE = 50 V dc

See footnotes at end of table.