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MIL-PRF-19500-354 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2604, 2N2604Ub, 2N2605, And 2N2605Ub, Jan, Jantx, Jantxv, And Jans, Janhc, JankcThis specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/354L

Dimensions

Symbol

Inches

Millimeters

Note

Min

Max

Min

Max

.178

.195

4.52

4.95

.065

.085

1.65

2.16

.209

.230

5.31

5.84

.100 TP

2.54 TP

.016

.021

0.41

0.53

.500

1.750 12.70 44.45

.016

.019

0.41

0.48

.050

1.27

.250

6.35

.040

1.02

.028

.048

0.71

1.22

3, 8

.036

.046

0.91

1.17

3, 8

.010

0.25

45� TP

NOTES:

1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.

2. Millimeters are given for general information only.

3. Symbol TL is measured from HD maximum.

4. Details of outline in this zone are optional.

5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within

.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at

MMC. The device may be measured by direct methods or by the gauge and gauging procedure.

6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.

7. Lead number three is electrically connected to case.

8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

9. Symbol r applied to both inside corners of tab.

10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions - (TO-46).