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MIL-PRF-19500-354 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2604, 2N2604Ub, 2N2605, And 2N2605Ub, Jan, Jantx, Jantxv, And Jans, Janhc, JankcThis specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/354L
Die size:
.018 x .018 inch (0.457 x 0.457 mm).
Die thickness:
.008 ±.0016 inch (0.203 ±0.0406 mm).
Base pad:
.0025 inch (0.0635 mm) diameter.
Emitter pad:
.003 inch (0.076 mm) diameter.
Back metal:
Gold, 6,500 ±1,950 Ang.
Top metal:
Aluminum, 19,500 ±2,500 Ang.
Back side:
Collector.
SiO2, 7,500 ±1,500 Ang.
Glassivation:
FIGURE 4. JANHC and JANKC B-version die dimensions.
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