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MIL-PRF-19500-354 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2604, 2N2604Ub, 2N2605, And 2N2605Ub, Jan, Jantx, Jantxv, And Jans, Janhc, JankcThis specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/354L
.015 x .019 inch ±.001 inch, (0.381 x 0.483 ±0.0254 mm).
1.
Chip size
.010 ±.0015 inch, (0.254 ±0.381).
2.
Chip thickness
3.
Top metal
Aluminum 15,000Å minimum, 18,000Å nominal.
4.
Back metal
A. Gold 2,500Å minimum, 3,000Å nominal.
B. Eutectic Mount - No Gold.
5. Backside
Collector.
6. Bonding pad
B = .003 inch, (0.076 mm), E = .004 inch, (0.102 mm) diameter.
Si3N4 (Silicon Nitride) 2kÅ min, 2.2kÅ nom.
7. Passivation
FIGURE 3. JANHC and JANKC A-version die dimensions.
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