MIL-PRF-19500-354 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2604, 2N2604Ub, 2N2605, And 2N2605Ub, Jan, Jantx, Jantxv, And Jans, Janhc, JankcThis specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/354L

TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles

Temperature cycling

(air to air)

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 and 4.5.3 herein.

Electrical measurements

Subgroup 2

45 devices

c=0

Intermittent life

1037

Intermittent operation life: VCB = 10 V dc, 6,000 cycles, adjust

device current, or power, to achieve a minimum ĆTJ of +100�C.

Electrical measurements

See table I, subgroup 2 and 4.5.3 herein.

Subgroup 4

Thermal resistance

3131

15 devices,

RθJSP need be calculated only.

c=0

Thermal response

See 4.2.2.1.

Sample size

curves

N/A

Subgroup 5

Not applicable

Subgroup 6

3 devices

1020

Testing is not required for class 3 listing. Testing is required for a

Electrostatic discharge

(ESD)

nonsensitive listing to prove capability.

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.