MIL-PRF-19500-359 Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N4942, 1N4944, 1N4946, 1N4947, And 1N4948, Jan, Jantx, And JantxvThis specification covers the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/359K

TABLE III. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/

MIL-STD-750

Limits

Symbol

Unit

Step

Inspection

Method

Conditions

Min

Max

-0.2

+0.1

V dc

Forward voltage

4011

IFM1 = 1.0 A dc, pulsed (see

ĆVF

4.5.1).

Reverse current

4016

VR = rated VRWM , (see 1.3),

ĆIR

≤ �100 percent of

leakage

pulsed (see 4.5.1).

initial value or �50

nA, whichever is

greater.

1/ Devices which exceed the table I limits for this test shall not be accepted.

2/ The electrical measurements for group B inspections in, table E-VIb (JAN, JANTX, and JANTXV) of

MIL-PRF-19500 are as follows: Subgroup 3, see table III herein, 1 and 2.

3/ The electrical measurements for group C inspections in, table E-VII of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table III herein, steps 1 and 2.

b. Subgroup 6, see table III, steps 1 and 2.

4/ The electrical measurements for group E inspections in, table E-IX of MIL-PRF-19500 are as follows:

a. Subgroup 1, see table III herein, steps 1 and 2.

b. Subgroup 2, see table III herein, steps 1 and 2.