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MIL-PRF-19500-359 Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N4942, 1N4944, 1N4946, 1N4947, And 1N4948, Jan, Jantx, And JantxvThis specification covers the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/359K
* TABLE I. Group A inspection ­ Continued.
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 4
*
Forward recovery voltage
4026
IF = 0.25 A; tp = 20 ns,
5.0
V
V(PEAK)
(minimum); tr = 8 ns.
Capacitance
4001
VR = 12 V dc, f = 0.1 to 1 MHz.
CJ
1N4942
45
pF
1N4944
35
pF
1N4946
25
pF
1N4947
20
pF
1N4948
15
pF
Reverse recovery time
4031
Condition B1.
Trr1
1N4942
150
ns
1N4944
150
ns
1N4946
250
ns
1N4947
250
ns
1N4948
500
ns
Scope display evaluation
4023
Stable, see 4.5.4,
n = 116, c = 0.
Subgroup 5
Not applicable
Subgroup 6
4066
IFSM =; ten surges of 15 A, 8.3
ms each at 1 minute intervals;
superimposed on IO = .750 A
dc; VRWM = rated (see 1.3
herein). TA = 55°C
Electrical measurements
See table I, subgroup 2 except
ZθJX
Subgroup 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
9



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