For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-359 Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N4942, 1N4944, 1N4946, 1N4947, And 1N4948, Jan, Jantx, And JantxvThis specification covers the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


img
MIL-PRF-19500/359K
* TABLE I. Group A inspection.
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
Subgroup 2
Forward voltage
4011
IFM1 = 1.0 A dc, pulsed (see
VFM1
0.6
1.3
V dc
4.5.1).
Reverse current leakage
4016
VR = rated VRWM, (see 1.3),
IR1
1.0
µA
pulsed (see 4.5.1).
Breakdown voltage
4021
V(BR)1
IR = 50 µA, pulsed (see
4.5.1).
1N4942
220
V dc
1N4944
440
V dc
1N4946
660
V dc
1N4947
880
V dc
1N4948
1,100
V dc
3101
See 4.3.1.
°C/W
ZθJX
Thermal impedance
Subgroup 3
High temperature
TA = +150°C.
operation
Reverse current leakage
4016
VR = rated VRWM (see 1.3),
IR2
200
µA
pulsed (see 4.5.1).
Low temperature
TA = -55°C.
operation
Forward voltage
4011
IFM = 1 A dc, pulsed (see
VFM2
0.6
1.5
V dc
4.5.1).
Reverse current
4016
VR = rated VRWM (see 1.3); dc
IR3
1.0
µA dc
method.
See footnote at end of table.
8



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.