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MIL-PRF-19500-359 Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N4942, 1N4944, 1N4946, 1N4947, And 1N4948, Jan, Jantx, And JantxvThis specification covers the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/359K
Maximum Thermal Impedance
50
Design Curve
10
5
1
0.5
0.001
0.01
0.1
1
10
50
Heating Time (sec)
ZθJX = 4°C/W at 10 ms.
FIGURE 2. Thermal impedance curve, RθJL = 38°C/W.
13



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