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MIL-PRF-19500-374 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3996 Through 2N3999, Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.

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MIL-PRF-19500/374E

* 4.3 Screening (JANS, JANTXV, JANTX levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance (see 4.3.3)

ICES1 and hFE2

ICES1

ICES1 and hFE2; ICES1 = 100

ICES1 and hFE2; I CES1 = 100

percent of initial value or 100 nA

percent of initial value or 100 nA dc;

dc, whichever is greater;

whichever is greater.

hFE2 = +15 percent, -10 percent

See 4.3.1

13a

Subgroups 2 and 3 of table I

Subgroup 2 of table I herein,

herein; ICES1 = 100 percent of

ICES1 = 100 percent of initial

initial value or 100 nA dc,

value or 200 nA dc, whichever is

greater; hFE2 = +20 percent, -10

whichever is greater;

hFE2 = +15 percent, -10 percent

percent

13b

Insulation resistance

Insulation resistance (terminal to

(terminal to case) method 1016

case) method 1016 of MIL-STD-750

of MIL-STD-750 (types 2N3996

(types 2N3996 and 2N3997 only);

and 2N3997 only); test

test condition B (short collector,

condition B (short collector,

emitter, and base terminals

together); Riso = 109  minimum.

emitter, and base terminals

together); Riso = 109  minimum

(1)

Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated

in screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions for all levels are as follows: VCE = 25 V dc, 5 V dc;

TJ = 187.5C, 12.5C; TA = 35C. max.

4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix

G of MIL-PRF-19500. Test limits and conditions shall be chosen by the supplier to demonstrate compliance with

electrical characteristics specified in table I herein.

* 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF19500 and as

specified herein. Group A inspection shall be performed on each sublot.