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MIL-PRF-19500-374 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3996 Through 2N3999, Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.

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MIL-PRF-19500/374E
NOTES:
.120 inch (3.05 mm) x .120 inch (3.05 mm) ±.002 inch (0.05 mm).
1.
Die size
.014 inch (0.35 mm) .0015 inch nominal (0.04 mm).
2.
Die thickness
3.
Top metal
Aluminum, 54,000Å minimum, 60,000Å nominal.
4.
Back metal
Gold 6,000Å minimum, 8,000Å nominal.
5.
Backside
Collector
6.
Bonding pad
B = .060 x .012 inch (1.5 mm x 0.30 mm).
E = .050 x .012 inch (1.27 mm x 0.30 mm).
* FIGURE 5. JANHC and JANKC (C-versions) die dimensions.
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