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MIL-PRF-19500-374 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3996 Through 2N3999, Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.

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MIL-PRF-19500/374E

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

C /W

Thermal impedance 2/

3131

See 4.3.3

ZJX

Bias condition D, IC = 10 A dc,

Breakdown voltage,

3001

V(BR)CBO

100

V dc

collector to base

IB = 0

Breakdown voltage,

3011

Bias condition D, IC = 50 mA dc,

V(BR)CEO

V dc

collector to emitter

pulsed (see 4.5.1)

Collector to emitter

3041

Bias condition C, VCE = 80 V dc,

ICES1

200

nA dc

cutoff current

VBE = 0

A dc

Collector to emitter

3041

Bias condition D, VCE = 60 V dc,

ICEO

cutoff current

IB = 0

Emitter to base

3061

Bias condition D, VEB = 5 V dc,

IEBO1

200

nA dc

cutoff current

IC = 0

A dc

Emitter to base

3061

Bias condition D, VEB = 8 V dc,

IEBO2

cutoff current

IC = 0

Base-emitter voltage

3066

Test condition A, IC = 1 A dc,

VBE(sat)1

0.6

1.2

V dc

(saturated)

IB = 0.1 A dc, pulsed (see 4.5.1)

Base-emitter voltage

3066

Test condition A, IC = 5 A dc,

VBE(sat)2

1.6

V dc

(saturated)

IB = 0.5 A dc, pulsed (see 4.5.1)

Collector to emitter

3071

IC = 1 A dc; IB = 0.1 A dc,

VCE(sat)1

0.25

V dc

voltage (saturated)

pulsed (see 4.5.1)

Collector to emitter

3071

IC = 5 A dc; IB = 0.5 A dc,

VCE(sat)2

V dc

voltage (saturated)

pulsed (see 4.5.1)

See footnote at end of table.