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MIL-PRF-19500-374 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3996 Through 2N3999, Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.

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MIL-PRF-19500/374E
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group
A, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and
4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I,
subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup Method
Condition
VCE 10 V dc, 2,000 cycles.
B4
1037
VCE = 20 V dc 1.0 V dc; 96 hours. Adjusted as required by the chosen TA to give an
B5
1027
average lot TJ = +275C.
Load condition C (unclamped inductive) (see figure 6), TA = +25C
B7
3053
3C, duty cycle 10 percent; RS = 0.1.
Test 1 - tp = 640 s; RBB1 = 39; VBB1 = 20 V dc; RBB2 = ; VBB2 = 0;
VCC = 10 V dc; IC = 4.3 A dc; L = 1 mH (0.5, 5A) (Tower #7870 or equivalent).
Test 2 - tp = 2.88 mS; RBB1 = 120; VBB1 = 20 V dc; RBB2 = ; VBB2 = 0;
VCC = 10 V dc; IC = 1.4 A dc; L = 10 mH (0.11 , 12.5A) (Stancor C-2688 or equivalent).
B7
3053
Safe operating area (switching) (destructive); load condition B (clamped
inductive) TA = +25C; IB = 0.5 A dc, IC = 5 A dc; VCC = 55 V dc, L = 1.0 mH,
VBB2 = 3.0 V, RBB2 = 20 .
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup Method
Condition
For solder die attach; VCE 10 V dc, 2,000 cycles.
B3
1037
For eutectic die attach TA = +35C max, PT adjusted to achieve TJ = +175C min,
B3
1027
VCE 10 V dc.
B5
Not applicable.
Load condition C (unclamped inductive) (see figure 6), TA = +25C, duty cycle
B7
3053
10 percent; RS = 0.1 .
Test 1 - tp = 640 s; RBB1 = 39; VBB1 = 20 V dc; RBB2 = ; VBB2 = 0; VCC = 10 V dc;
IC = 4.3 A dc; L = 1 mH (0.5 , 5A) (Tower #7870 or equivalent).
Test 2 - tp = 2.88 mS; RBB1 = 120; VBB1 = 20 V dc; RBB2 = ; VBB2 = 0; VCC = 10 V dc;
IC = 1.4 A dc; L = 10 mH (0.11 , 12.5A) (Stancor C-2688 or equivalent)
Safe operating area (switching) (destructive); load condition B (clamped inductive) TA = 25C;
B7
3053
IB = 0.5 A dc, IC = 5 A dc; VCC = 55 V dc, L = 1.0 mH, VBB2 = 3.0 V, RBB2 = 20 .
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