MIL-PRF-19500-374 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3996 Through 2N3999, Jan, Jantx, Jantxv, Jans, Janhc And JankcThis specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die.

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MIL-PRF-19500/374E

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.

Subgroup Method

Condition

Test condition A; weight = 7 pounds 5 ounce, application time = 15 s, tubulated leads only.

2036

Test condition D2; torque = 15 inch-pound; application time = 15 s.

Test condition D1; torque = 8 in-oz; application time = 15 s; tubulated leads only.

See 4.5.4, RJC = 5�C/W.

3131

For solder die attach; VCE  10 V dc, 6,000 cycles

1037

For eutectic die attach TA = +35C max, PT adjusted to achieve TJ = +175C min,

1026

VCE  10 V dc

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Case-temperature control for hfe test. To maintain the case temperature at less than +40C for this test, the

specified dc collector current should be applied for not longer than 10 seconds without employing a heat sink.

4.5.3 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted as a case

temperature (TC) of +25C.

* 4.5.4 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 3131

of MIL-STD-750 using the guidelines in that method for determining IM, IH, and tH. Measurement delay time tMD =

70 ms max. Forced moving air or draft shall not be permitted across the devices during test.