MIL-PRF-19500-376 Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N2484, 2N2484Ua, 2N2484Ub, 2N2484Ubc, 2N2484Ubn, 2N2484Ubcn Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh Janhca, Janhcb, Jankca, Jankcb, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/376K

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

PCB

Printed circuit board

Thermal resistance junction to ambient.

RJA

UA, UB, and UBC

Surface mount case outlines (see figures 2, 3, and 4).

* 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5. No lead (Pb) shall be used in the construction of the die bonds.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

* 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB, UBC, UBN, and UBCN

suffix packages. Marking on the UB, UBC, UBN, and UBCN packages shall consist of an abbreviated part number,

the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be

abbreviated as J, JX, JV, and JS respectively. The "2N" prefix can also be omitted. The radiation hardened

designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon

degree of abbreviation required).

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I, II, III, and IV).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.2.1. JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.