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MIL-PRF-19500-391 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance \(RHA\) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/391N

Dimensions

Symbol

Inches

Millimeters

Notes

Min

Max

Min

Max

TO-39

.305

.335

7.75

8.51

.240

.260

6.10

6.60

TO-5

.335

.370

8.51

9.40

.200 TP

5.08 TP

.016

.021

0.41

0.53

7, 8

.500

.750

12.70 19.05

7, 8, 12

.016

.019

0.41

0.48

7, 8

.050

1.27

7, 8

.250

6.35

7, 8

.050

1.27

.029

.045

0.74

1.14

.028

.034

0.71

0.86

.010

0.25

45� TP

.100

2.54

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within

.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at

MMC. The device may be measured by direct methods.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is

uncontrolled in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

12. For "S" suffix devices, dimension LL is 0.500 (12.70 mm) minimum, 0.750 (19.05 mm) maximum.

13. "S" suffix devices, dimension LL is 0.50 (12.70 mm) minimum, 0.75 (19.05 mm) maximum.

14. "L" suffix devices, dimension LL is 1.500 (38.10 mm) minimum, 1.750 (44.45 mm) maximum. 13.

15. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions for device types 2N3019 (TO-5) and 2N3019S (TO-39).