MIL-PRF-19500-391 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance \(RHA\) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/391N

Chip size.............................024 x .026 inch �.002 inch (0.610 X 0.660 �0.051 millimeter).

Chip thickness....................010 inch �.0015 inch (0.254 �0.0381 millimeter).

Top metal...........................Aluminum 15,000� minimum, 18,000� nominal.

Back metal.........................Gold:3,500� minimum, 5,000� nominal.

Backside............................Collector.

Bonding pad.......................B = .004 inch x .006 inch (0.102 X 0.152 millimeter).

E = .004 inch x .0055 inch (0.102 X 0.140 millimeter).

FIGURE 6. JANHCB and JANKCB die (2N3700) dimensions.