MIL-PRF-19500-391 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance \(RHA\) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/391N

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VIa (JANS) of MIL�PRF�195000 and 4.4.2.1 herein. Electrical

measurements (end-points) shall be in accordance with group A, subgroup 2. See 4.4.2.2 herein for JAN, JANTX,

and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after

each step in 4.4.2.2 and shall be in accordance with table I, group A, subgroup 2.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL�PRF�19500.

Subgroup

Method

Condition

VCB = 10 V dc, 2,000 cycles, adjust device current, or power, to achieve a minimum

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ĆTJ of +100�C.

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NOTE: If a failure occurs, resubmission shall be at the test conditions of the original

sample. VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).

Option 1: 96 hours minimum, sample size in accordance with MIL-PRF-19500,

table E-VIa, adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve

TJ = +225�C minimum.

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Test condition D.

Not applicable.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL�PRF�19500 shall apply. In addition, all catastrophic

failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a

failure is identified as wafer lot and /or wafer processing related, the entire wafer lot and related devices assembled

from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode

has been implemented and the devices from the wafer lot are screened to eliminate the failure mode.

Step

Method

Condition

Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to

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achieve TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated

PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and

the test time decreased so long as the devices are stressed for a total of 45,000 device

hours minimum, and the actual time of test is at least 340 hours.

Blocking life: TA = +150�C, VCB = 80 percent rated voltage, without exceeding max

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rated VCEO. 48 hours minimum. n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

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