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MIL-PRF-19500-391 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N3019, 2N3019S, 2N3057A, 2N3700, And 2N3700Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Janhcb, Jankca, Jankcb Jankcbm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assurance \(RHA\) to three radiation levels is provided for JANTXV JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/391N
Die size:
.030 x .030 inch (0.762 x 0.762 mm).
Die thickness:
.008 ±.0016 inch (0.2032 mm ±0.04064 mm).
Base pad:
.004 x .010 inch (0.1016 mm x 0.254 mm).
Emitter pad:
.0023 x .007 inch (0.05842 mm x 0.1778 mm).
Back metal:
Gold, 6,500 ±1,950 Å.
Top metal:
Aluminum, 12,000 Å minimum; 14,500 Å nominal.
Back side:
Collector.
SiO2, 7,500 ±1,500 Å.
Glassivation:
FIGURE 5. JANHCA and JANKCA die (2N3700 and 2N3019) dimensions.
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