INCHPOUND
MILPRF19500/408K
The documentation and process conversion measures
20 February 2013
necessary to comply with this document shall be
SUPERSEDING
completed by 20 August 2013.
MILPRF19500/408J
5 June 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
TYPES 2N3715 AND 2N3716, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four
levels of product assurance are provided for each device type as specified in MILPRF19500.
1.2 Physical dimensions. The device package style is TO204AA (formerly TO3) in accordance with figure 1.
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
PT (1)
PT (2)
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
RθJC (3)
Types
TA = +25°C
TC = +25°C
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
2N3715
5.0
117
1.5
80
60
7.0
4.0
10
65 to +200
2N3716
5.0
117
1.5
100
80
7.0
4.0
10
65 to +200
(1) Derate linearly 28.57 mW/°C above TA = +25°C.
(2) See figure 2 for temperature-power derating curves.
(3) See figure 3 for transient thermal impedance graph.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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