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MIL-PRF-19500-408 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Types 2N3715 And 2N3716, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/408K
TABLE I. Group A inspection.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance 2/
3131
See 4.3.1
°C/W
ZθJX
Bias condition D, IC = 10 mA dc;
V(BR)CEO
Breakdown voltage,
3011
collector to emitter
pulsed (see 4.5.1)
2N3715
60
V dc
2N3716
80
V dc
ICBO
Collector-base cutoff current
3036
Bias condition D
µA dc
VCB = 80 V dc
2N3715
10
µA dc
VCB = 100 V dc
2N3716
10
Bias condition D; VEB = 7 V dc
IEBO
Emitter-base cutoff current
3061
1.0
mA dc
Bias condition A, VBE = 1.5 V dc
ICEX1
Collector to emitter
3041
cutoff current
µA dc
VCE = 60 V dc
2N3715
10
µA dc
VCE = 80 V dc
2N3716
10
ICES1
Collector to emitter
3041
Bias condition C
cutoff current
µA dc
VCE = 60 V dc
2N3715
10
µA dc
VCE = 80 V dc
2N3716
10
Test condition A; IC = 5 A dc;
VBE(SAT)1
Base emitter voltage
3066
1.5
V dc
IB = 0.5 A dc; pulsed (see 4.5.1);
(saturated)
Test condition A; IC = 10 A dc;
VBE(SAT)2
Base emitter voltage
3066
3.0
V dc
IB = 2 A dc; pulsed (see 4.5.1);
(saturated)
IC = 5 A dc; IB = 0.5 A dc
VCE(SAT)1
Saturation voltage; collector
3071
1.0
V dc
to emitter
pulsed (see 4.5.1)
IC = 10A dc; IB = 2 A dc
VCE(SAT)2
Saturation voltage; collector
3071
2.5
V dc
to emitter
pulsed (see 4.5.1)
VCE = 2.0 V dc; IC = 1.0 A dc;
hFE1
Forward-current transfer ratio
3076
50
150
pulsed (see 4.5.1)
VCE = 2.0 V dc; IC = 3.0A dc;
Forward-current transfer ratio
3076
30
120
hFE2
pulsed (see 4.5.1)
See footnote at end of table.
9



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