MIL-PRF-19500-437 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 Through 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518Bur-1, 1N5518Cur-1, 1N5518Dur-1 Through 1N5546Bur-1, 1N5546Cur 1, 1N5546Dur-1, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels \(see 6.5\).

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/437H

4.5.5 Noise density. Noise density shall be measured using a noise density test circuit as shown on figure 11.

Place a low noise resistor, equivalent in value to the dynamic impedance of the diode under test, in the test clips and

adjust test current (IZT) and measure output noise voltage. Remove resistor, insert diode under test in test clips,

readjust test current to 250 μA dc and measure output noise voltage again. To obtain noise density (ND), subtract

rms resistor output noise voltage from rms diode output noise voltage and divide by product of overall system gain

and square root of bandwidth. All measurements shall be made at +25�C.

4.5.6 Regulation factor. Breakdown voltage shall be measured at a low current, IZL as shown in column 13 of

table IV. This voltage shall be subtracted from the breakdown voltage measured at IZ in column 11 of table IV. The

difference is the regulation factor (ΔVZ) and shall be less than the maximum value shown in column 12 of table IV.