MIL-PRF-19500-437 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 Through 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518Bur-1, 1N5518Cur-1, 1N5518Dur-1 Through 1N5546Bur-1, 1N5546Cur 1, 1N5546Dur-1, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels \(see 6.5\).

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MIL-PRF-19500/437H

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, and figures 1 (DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC) herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500.

3.4.2.1 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction

or straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end.

Alternately, for surface mount (UR) devices, a minimum of three evenly spaced contrasting color dots around the

periphery of the cathode end may be used. No color coding will be permitted.

3.5.2 Marking of UR suffix version devices. For UR suffix (surface mount) devices only, all marking (except

polarity) may be omitted from the body of the device, but shall be retained on the initial container.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6.1 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX, or

JANTXV devices which have successfully completed all applicable screening, table I, and groups B and C testing as

5 percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2 at the tightened

tolerances. The TL or TEC for C and D suffix devices shall be maintained at 30�C �2�C for VZ correlation on tight

tolerances.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.1, 4.4.2,

and tables II and III.

3.8 Maximum and primary test ratings. Maximum test ratings for voltage regulator diodes are specified in table IV,

columns 3, 4, and 10 herein. Primary electrical characteristics are in columns 1, 6, 8, and 9.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).