An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-437 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 Through 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518Bur-1, 1N5518Cur-1, 1N5518Dur-1 Through 1N5546Bur-1, 1N5546Cur 1, 1N5546Dur-1, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels \(see 6.5\).

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/437H

TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits 2/

Unit

Method

Conditions

Min

Max

Subgroup 1

2071

Visual and mechanical

examination

Subgroup 2

Forward voltage

4011

IF = 200 mA dc

1.1

V dc

μA dc

IR1

Column 6

Reverse current

4016

DC method, VR = column 5

of table IV

Regulator voltage

4022

IZ = column 11 of table IV

Column 1

V dc

-VZ tol

+VZ tol

(see 4.5.2)

ΔVZ

Column

V dc

Regulation factor

IZ = column 11, and

IZL = column 13 of table IV

(see 4.5.6)

�C/W

ZΘJX

Thermal impedance

3101

(see 4.3.2)

Subgroup 3

TA = +150�C

High temperature

operation:

μA dc

Reverse current

4016

DC method; VR = column 5

IR2

Column 2

of table IV

Subgroup 4

ZZT

Column 3

ohms

4051

IZ = column 11

Small-signal reverse

breakdown impedance

ISIG = 10 percent of IZ

IZ = 250 μA dc

Column 9

___

Noise density

μV/√ Hz

(see 4.5.5)

Subgroup 5

Not applicable

Subgroup 6

4066

See 4.5.1

Surge current

Table I, subgroup 2

Electrical

measurements

1/ For sampling plan, see MIL-PRF-19500.

2/ Column references are to table IV herein.