MIL-PRF-19500-437 Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 Through 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518Bur-1, 1N5518Cur-1, 1N5518Dur-1 Through 1N5546Bur-1, 1N5546Cur 1, 1N5546Dur-1, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. For JANHC and JANKC quality levels \(see 6.5\).

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MIL-PRF-19500/437H

TABLE II. Group E inspection qualification and requalification (all product assurance levels).

Qualification conformance

inspection (sampling plan)

MIL-STD-750

Inspection 1/

Method

Conditions

45 devices, c = 0

Subgroup 1

Temperature cycling

1051

500 cycles.

Electrical measurements

See table III, steps 1, 3, 4, and 5.

45 devices, c = 0

Subgroup 2

1037

6,000 cycles. IZ = column 10 (min) of table IV.

Steady-state dc

intermittent life

Electrical measurements

See table III, steps 2, 3, 4, and 5. Provide

read and record ΔZΘJX data to the qualifying

activity.

Subgroup 4

Sample size

Thermal impedance

See MIL-PRF-19500.

N/A

curves

Subgroups 5 and 6

Not applicable

Subgroup 7

n = 45

Resistance to glass

1057

Condition B. Cool down after solder

cracking

immersion is permitted. Test until failure

occurs on all devices or to a maximum of 25

cycles, whichever comes first.

1/ A separate sample may be pulled for each test.