MIL-PRF-19500-441 Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N3740, 2N3740U4, 2N3741, And 2N3741U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/441K

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and 4.4.3.1 (JANS), and 4.4.3.2 (JAN, JANTX, and JANTXV)

herein for group C testing. Electrical measurements (end-points) shall be as specified in table I, subgroup 2. Delta

requirements shall be in accordance with table II herein.

4.4.3.1 Group C inspection, table E-VII (JANS only) of MIL-PRF-19500.

Subgroup

Method

Conditions

2036

Test condition A, weight = 3 lbs, t = 15 s, not applicable to 2N3740U4 and 2N3741U4.

Thermal resistance; see 4.3.3, RθJC = 7�C/W for 2N3740, 2N3741; RθJC = 6�C/W for

3131

2N3740U4, 2N3741U4.

6,000 cycles, tON = tOFF = 3 minutes, PD(ON) = PD max rated in accordance with 1.3;

1037

PD(OFF) = 0.

4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV only) of MIL-PRF-19500.

Subgroup

Method

Conditions

2036

Test condition A, weight = 3 lbs, t = 15 s, not applicable to 2N3740U4 and 2N3741U4.

Thermal resistance; see 4.3.3, RθJC = 7�C/W for 2N3740, 2N3741; RθJC = 6�C/W for

3131

2N3740U4, 2N3741U4.

Not applicable.

4.4.3.3 Group C inspection sample selection. Samples for subgroups in group C shall be chosen at random from

any lot containing the intended package type and lead finish procured to the same specification which is submitted to

and passes table I tests for conformance inspection. Testing of a group using a single device type enclosed in the

intended package type shall be considered as complying with the requirements for that subgroup.

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANKC types shall include

the group D tests specified in table III herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall

be in accordance with the applicable steps of table I, subgroup 2. Delta requirements shall be in accordance with

table II herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at a case temperature of

+25�C �3�C.