MIL-PRF-19500-441 Semiconductor Device, Transistor, Pnp, Silicon, Power Types 2N3740, 2N3740U4, 2N3741, And 2N3741U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for PNP, silicon, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/441K

4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of

MIL-STD-750, see 4.3.3.

ICEX1 and hFE2

Not applicable.

48 hours minimum.

ICEX1 and hFE2;

ICEX1 and hFE2

ĆICEX1 = 100 percent of initial value or 50

nA dc, whichever is greater,

ĆhFE2 = � 25 percent of initial value.

See 4.3.1.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICEX1 = 100 percent of initial value or

ĆICEX1 = 100 percent of initial value or 50

50 nA dc; whichever is greater;

nA dc, whichever is greater;

ĆhFE2 = �25 percent of initial value.

(1)

Thermal impedance shall be performed anytime after temperature cycling, screen 3a and does not need to be

repeated in screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to the device to achieve a junction temperature, TJ = +175 �C minimum and a minimum PD = 75 percent of PT

maximum rated as defined in 1.3.

4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

appendix G of MIL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows

JANTX requirements.

* 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 70 �s max. See table IV, group E, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.