MIL-PRF-19500-485 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Types: 2N5415, 2N5415S, 2N5415Ua, 2N5415U4, 2N5416, 2N5416S, 2N5416Ua, And 2N5416U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Jankcb, Jankcd, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/485N

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic

failures during CI shall be analyzed to the extent possible to identify root cause and corrective action.

Step

Method

Conditions

Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to

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achieve TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated

PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and

the test time decreased as long as the devices are stressed for a total of 45,000 device

hours minimum, and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

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n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

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4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.

See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS ) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with

table I, subgroup 2 herein.

4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

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Test condition E; (not applicable for UA and U4 devices).

RθJA and RθJC only, as applicable (see 1.3) and in accordance with thermal impedance

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curves.

VCB = 10 - 30 V dc; power shall be applied to achieve TJ = +150�C minimum and a

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minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0.

The sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours.