MIL-PRF-19500-485 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power Types: 2N5415, 2N5415S, 2N5415Ua, 2N5415U4, 2N5416, 2N5416S, 2N5416Ua, And 2N5416U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Jankcb, Jankcd, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/485N

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where

appropriate). Measurement delay time (tMD) = 70 �s max. See table II, group E, subgroup 4 and figures 6, 7, and 8

herein.

4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed per MIL-PRF-19500, a sample of screened devices shall

be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not

required to be performed again if group B has already been satisfied in accordance with 4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I,

subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements

(end-points) requirements shall be in accordance with table I, subgroup 2 herein. See 4.4.2.2 for JAN, JANTX, and

JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each

step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

Conditions

1037

VCB = 10 V dc; 2,000 cycles. Adjust device current, or power, to achieve a minimum

ĆTJ of 100�C.

1027

(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original

sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).

Option 1: 96 hours minimum sample size in accordance with table E-VIa of

MIL-PRF-19500, adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve

TJ = +225�C minimum.